恭喜！何孟書教授指導陳德森同學以「First-Principle Theory And Experimental Evaluation Of Low Dimensional β-Ga2O3 Resistive Switching Memory」論文，榮獲第二屆 奈米元件電路與技術研討會——新穎半導體材料與元件分析技術類 學生論文獎特優殊榮。
Resistive switching (RS) memory is one of the prospective future generation nonvolatile memories, with potential advantages over other emerging nonvolatile memories such as DRAM, PCRAM, CBRAM, and so on. The scientific community has comprehensively investigated dielectric thin films as resistive switching material, but the feasibility of low-dimensional (LD) materials has not been broadly examined. One of the promising candidates investigated for diverse semiconductor device applications is beta phase gallium oxide (β-Ga2O3). The objective of this work was to perform a theoretical and experimental evaluation of the RS phenomenon in LD:β-Ga2O3 nanostructures and deliver a profound insight. The LD:β-Ga2O3 resistive memory devices were experimentally validated on nanostructures grown by the VLS method. The as-grown nanostructures were subjected to the physical and chemical characterizations, which revealed the presence of spontaneous defects, particularly oxygen vacancies, and further examinations were performed to validate the role of oxygen vacancies. Thus, the analogous structures consistent with the DFT framework were modeled, and the fundamental physical and electronic properties were examined to deliver a profound insight.